Bipolar Transistors in Silicon-on-Sapphire (SOS): Effects of Nanosecond Thermal Processing
NAVAL OCEAN SYSTEMS CENTER SAN DIEGO CA
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Nanosecond thermal processing NTP using an XeCl excimer laser was employed in the fabrication of npn bipolar transistors in SOS. Functional devices, with current gain Beta approaching 100, were obtained. The deleterious effects of diffusion pipes in SOS material were minimized using rapid laser activation of ion implanted dopant.
- Electrical and Electronic Equipment