Double-Crystal X-Ray Diffraction Studies of Si Ion-Implanted Laser- Annealed GaAs
AEROSPACE CORP EL SEGUNDO CA MATERIALS SCIENCES LAB
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Double-crystal x-ray rocking curves and topographs have been used to study the relief of strain produced by pulsed laser annealing in 28Si ion- implanted GaAs. X-ray rocking curves of 140 keV 2 x 1014cm2 as-implanted GaAs indicated that the upper 2500 angstroms of the sample had been strained to a maximum of 0.38. Rocking curves from two of a single-shot laser anneal sites with the highest energy densities and largest areas of annealing indicated that the ion-implantation strain had been almost completely relieved. X-ray rocking curves of the 180 keV 5 x 1015cm2 as-implanted GaAs revealed that the surface of the sample has been strained to a depth of 6000 angstroms with a maximum strain of 0.50. Rocking curves from rastered laser anneal sites indicated that considerable strain remained in the sample.
- Solid State Physics