Research on Silicon, Carbon, and Silicon Carbide Heterostructures
Final rept. 1 Jul 1987-31 Jul 1990,
WESTINGHOUSE SCIENCE AND TECHNOLOGY CENTER PITTSBURGH PA
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This report describes the accomplishments on this program in obtaining an understanding of the deposition of Group IV thin films by the remote plasma chemical deposition process RPCVD. We characterized the deposition process by emission spectroscopy and excited state absorption of resonance radiation by metastable states. We deposited and characterized amorphous Si, C, SiC, and heterostructures of Si and SiC. We related the properties of the deposited films to the process parameters. UHV surface chemistry techniques were developed and applied to the study of fundamental deposition processes. A UHV cryogenic cathodoluminescence facility was developed and used to study crystalline diamond and RPCVD-deposited materials.
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