Investigation of Schottky Barrier on GaAs and InP Using a Multi-Disciplined Approach
Final rept 15 Jul 1986-14 Jan 1990
STANFORD UNIV CA STANFORD ELECTRONICS LABS
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Major progress is reported in understanding and bringing under control metalGaAs contacts. The key to this realization that defects at the interface can control the electrical properties of such contacts. By properly controlling these defects it appears that the Schottky barrier height may be varied strongly to obtain the desired values for specific applications, i.e. large barriers for Schottky gates and small values for ohmic contacts. Evidence is presented that the key defects are As and Ga antisites. The Fermi level position at the interface, Ef, is the most important parameter in determining the electrical properties of the contract. Under normal conditions the As antisite levels dominate and the Fermi level is pinned near mid-gap. Producing excess As moves Ef toward the CBM whereas, excess Ga moves it toward the VBM.
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