Accession Number:

ADA231696

Title:

Neutron Degradation of the I-V Characteristics of AlGaAs/GaAs Modulation-Doped Field Effect Transistors

Descriptive Note:

Technical rept.

Corporate Author:

AEROSPACE CORP EL SEGUNDO CA LAB OPERATIONS

Report Date:

1991-01-04

Pagination or Media Count:

12.0

Abstract:

A triangular-well, one-subband depletion layer model has been developed which applies over the range of I-V characteristics from subthreshold to saturation, some nine orders of magnitude in source-drain current. The model has been extended to describe neutron degradation of source-drain current and transconductance.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE