Neutron Degradation of the I-V Characteristics of AlGaAs/GaAs Modulation-Doped Field Effect Transistors
AEROSPACE CORP EL SEGUNDO CA LAB OPERATIONS
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A triangular-well, one-subband depletion layer model has been developed which applies over the range of I-V characteristics from subthreshold to saturation, some nine orders of magnitude in source-drain current. The model has been extended to describe neutron degradation of source-drain current and transconductance.
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