Kinetic Aspects of Lattice Mismatch in Molecular Beam Epitaxial Growth on Planar and Patterned Substrates
Final rept. 15 May 1986-30 Apr 1990
UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES DEPT OF MATERIALS SCIENCE AND ENGINEERING
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This, the Final Scientific Report on AFOSR Grant 86-0166, provides the highlights of the work accomplished under the project. While the details are to be found in the publications listed as part of the report, the major accomplishments are 1 identification of growth kinetics optimized and reproducible growth, independent of machine parameters, of GaAsAlGaAs and GaAs InGaAs layered structures via the usage of real time reflection high energy electron diffraction in molecular beam epitaxical growth, 2 the first realization of high mobility inverted HEMT structures, 3 demonstration of the dominant scattering from band edge discontinuity fluctuations, rather than the commonly held view of well width fluctuations in high quality GaAsAlGaAs quantum well structures.
- Atomic and Molecular Physics and Spectroscopy