Hot Electron Stress Testing of Submicron Transistors
Technical rept. Mar-Oct 1988,
ARMY LAB COMMAND FORT MONMOUTH NJ ELECTRONICS TECHNOLOGY AND DEVICES LAB
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Hot electrons are a major reliability concern for submicron metal- oxide-semiconductor MOS transistors. This report details experimental results of long-term hot electron degradation. theoretical explanation of test results is provided. The implications of these results with respect to the validity of long-term reliability predictions is also discussed.
- Electrical and Electronic Equipment