Accession Number:

ADA231518

Title:

Hot Electron Stress Testing of Submicron Transistors

Descriptive Note:

Technical rept. Mar-Oct 1988,

Corporate Author:

ARMY LAB COMMAND FORT MONMOUTH NJ ELECTRONICS TECHNOLOGY AND DEVICES LAB

Personal Author(s):

Report Date:

1990-10-01

Pagination or Media Count:

50.0

Abstract:

Hot electrons are a major reliability concern for submicron metal- oxide-semiconductor MOS transistors. This report details experimental results of long-term hot electron degradation. theoretical explanation of test results is provided. The implications of these results with respect to the validity of long-term reliability predictions is also discussed.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE