Atomic Layer Epitaxy of Silicon, Silicon/Germanium and Silicon Carbide via Extraction/Exchange Processes
Final technical rept. 1 May 1989-30 Oct 1990,
NORTH CAROLINA STATE UNIV AT RALEIGH
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The primary focus of the research for this grant has been the atomic layer epitaxy ALE of Si however, the ALE of SiC has also received serious consideration. A Computer assisted study, based on the free energy minimization of a thermodynamic system undergoing equilibrium reactions has shown that the progressive decomposition of SiH2Cl2 the Si precursor of choice in this study results in the products of SiCl2, H2, SiH2Cl2, HCl and Si. Moreover, above 600 C, SiCl2 is stable. Thus SiCl2 adsorbed onto the surface will not decompose. It is predicted to react with H2, forming Si on the surface.