Accession Number:

ADA231310

Title:

PEMOCVD Ferroelectric Nonvolatile Radiation-Hard Memories. Phase 1

Descriptive Note:

Final rept. 1 May-31 Oct 1990,

Corporate Author:

RADIANT TECHNOLOGIES ALBUQUERQUE NM

Personal Author(s):

Report Date:

1990-11-30

Pagination or Media Count:

16.0

Abstract:

The purpose of this Phase I effort was to determine the feasibility of depositing ferroelectric lead zirconium titanium oxide PZT thin films using plasma enhanced-metalorganic chemical vapor deposition PEMOCVD. To obtain PZT films that are useful for integrated circuit ferroelectric memories, the films should be deposited directly in the perovskite phase at the lowest possible substrate temperatures. This would circumvent problems from high temperature deposition and annealing that have hindered development of ferroelectric thin films devices. These problems include thermally induced strain in the films and incompatibility with standard semiconductor processing.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE