Silicon Carbide Semiconductor Device Fabrication and Characterization
Final rept. 10 Feb 1987-8 Feb 1990,
NORTH CAROLINA STATE UNIV AT RALEIGH
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A number of basic building blocks i.e. rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films have been fabricated and characterized. Gold forms a rectifying contact of beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it has been possible to utilize Au contact diodes for electrically characterizing SiC films.
- Electrical and Electronic Equipment