Accession Number:

ADA231299

Title:

Silicon Carbide Semiconductor Device Fabrication and Characterization

Descriptive Note:

Final rept. 10 Feb 1987-8 Feb 1990,

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH

Personal Author(s):

Report Date:

1990-02-08

Pagination or Media Count:

35.0

Abstract:

A number of basic building blocks i.e. rectifying and ohmic contacts, implanted junctions, MOS capacitors, pnpn diodes and devices, such as, MESFETs on both alpha and beta SiC films have been fabricated and characterized. Gold forms a rectifying contact of beta SiC. Since Au contacts degrade at high temperatures, these are not considered to be suitable for high temperature device applications. However, it has been possible to utilize Au contact diodes for electrically characterizing SiC films.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE