Efficient GaInAsSb/AlGaAsSb Diode Lasers Emitting at 2.29 Micrometers
MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB
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Diode lasers emitting at 2.29 omega have been fabricated from lattice-matched double heterostructures having a GaInAsSb active layer and AlGaAsSb confining layers grown by molecular beam epitaxy on GaSb substrates. For pulsed room-temperature operation these devices have exhibited threshold current densities as low as 1.7 kAcm2 and differential quantum efficiencies as high as 18 per facet, the highest room-temperature efficiency reported for any semiconductor diode laser emitting beyond 2 omega.
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