Accession Number:

ADA231223

Title:

Efficient GaInAsSb/AlGaAsSb Diode Lasers Emitting at 2.29 Micrometers

Descriptive Note:

Corporate Author:

MASSACHUSETTS INST OF TECH LEXINGTON LINCOLN LAB

Personal Author(s):

Report Date:

1990-09-24

Pagination or Media Count:

4.0

Abstract:

Diode lasers emitting at 2.29 omega have been fabricated from lattice-matched double heterostructures having a GaInAsSb active layer and AlGaAsSb confining layers grown by molecular beam epitaxy on GaSb substrates. For pulsed room-temperature operation these devices have exhibited threshold current densities as low as 1.7 kAcm2 and differential quantum efficiencies as high as 18 per facet, the highest room-temperature efficiency reported for any semiconductor diode laser emitting beyond 2 omega.

Subject Categories:

  • Electrical and Electronic Equipment
  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE