Accession Number:

ADA230684

Title:

Analysis of Space Radiation Effects in Gallium Arsenide and Cadmium Selenide Semiconductor Samples Using Luminescence Spectroscopic Techniques

Descriptive Note:

Master's thesis

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1990-12-01

Pagination or Media Count:

120.0

Abstract:

Analysis of space radiation effects in gallium arsenide and cadmium selenide semiconductor samples using luminescence spectroscopic techniques. The M0006 semiconductor samples were placed into a 28.5 degree inclination, 480 km altitude, near-circular orbit aboard the Long Duration Exposure Facility satellite and exposed to direct space environment for a period of 11 months, and were shielded by 0.313 inches of aluminum for another 58 months. The samples were examined for changes using cathodoluminescence and photoluminescence in various wavelength regions from 0.5 to 1.8 microns. Samples were cooled to approximately 10 degrees Kelvin in a vacuum of 10-8.

Subject Categories:

  • Physical Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE