Accession Number:

ADA230676

Title:

Design and Fabrication of an Implantable Cortical Semiconductor Integrated Circuit Electrode Array

Descriptive Note:

Master's thesis

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING

Personal Author(s):

Report Date:

1990-12-01

Pagination or Media Count:

90.0

Abstract:

This research furthered the processing steps of the AFIT 16 by 16 implantable cortical semiconductor integrated circuit electrode array, or brain chip. The areas of interest include the brain chip electron ics, metallization, ionic permeation, and implantation. The electronics and metallization are heavily covered. A high speed, single clock divide-by-two circuit was modified with a reset transistor and cascaded to form a ripple counter. This device had stable operation at specific source voltage and clock voltage and frequency. A 7-stage inverter with 10 unmodified divide-by-two circuits cascaded operated between 1.7 and 8 volts, and between 39 Khz and 1 Mhz, respectively. The metallization process refers to coating AuNi or Pt onto exposed aluminum areas pads of a CMOS integrated circuit. Sputtering was used to coat the chip. And an AuNi etchant or Pt peel-off technique was used. The AuNi etchant used was iodine, potassium iodide, and deionized water solution. Theses. RH

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE