Accession Number:

ADA230413

Title:

The Use of Tris(trimethylsilyl)arsine to Deposit GaAs by OMCVD

Descriptive Note:

Technical rept.

Corporate Author:

DUKE UNIV DURHAM NC DEPT OF CHEMISTRY

Report Date:

1990-12-14

Pagination or Media Count:

7.0

Abstract:

Chemical vapor deposition experiments using Me3Si 3As with either GaCl3 or Me3Ga at ambient pressure have produced films of GaAs on Si and semi- conducting GaAs substrates. The films have been characterized by X-ray diffraction and Auger electron spectroscopy, and each have small amounts of C and O impurities. No desired films were deposited from C6F53GaAsSiMe33 at 500 degrees C and low pressures.

Subject Categories:

  • Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE