Accession Number:

ADA230413

Title:

The Use of Tris(trimethylsilyl)arsine to Deposit GaAs by OMCVD

Descriptive Note:

Technical rept.

Corporate Author:

DUKE UNIV DURHAM NC DEPT OF CHEMISTRY

Personal Author(s):

• Berry, A. D.
• Purdy, A. P.
• Wells, R. L.
• Pasterczyk, J. W.
• Johansen, J. D.

Report Date:

1990-12-14

Pagination or Media Count:

7.0

Abstract:

Chemical vapor deposition experiments using Me3Si 3As with either GaCl3 or Me3Ga at ambient pressure have produced films of GaAs on Si and semi- conducting GaAs substrates. The films have been characterized by X-ray diffraction and Auger electron spectroscopy, and each have small amounts of C and O impurities. No desired films were deposited from C6F53GaAsSiMe33 at 500 degrees C and low pressures.

Descriptors:

• *EXPERIMENTAL DATA
• GALLIUM ARSENIDES
• X RAY DIFFRACTION
• FILMS
• LOW PRESSURE
• AUGER ELECTRON SPECTROSCOPY
• SUBSTRATES
• SEMICONDUCTORS
• IMPURITIES
• DEPOSITION
• CHEMICAL REACTIONS
• CHEMICALS
• VAPOR DEPOSITION

Subject Categories:

• Inorganic Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE