Accession Number:

ADA230016

Title:

Selective Heteroepitaxial Growth of Compound Semiconductors

Descriptive Note:

Final rept. Aug 1988-Oct 1990

Corporate Author:

TEXAS INSTRUMENTS INC DALLAS CENTRAL RESEARCH LABS

Personal Author(s):

• Beam, Edward
• Kao, Yung-Chung

Report Date:

1990-11-01

Pagination or Media Count:

58.0

Abstract:

The effect of reduced growth area on the lattice mismatch accommodation of InxGa1-xAsGaAs and GaAsSi grown by molecular beam epitaxy MBE has been studied with cross-sectional transmission electron microscopy XTEMand cathodoluminescence CL. Results indicate that the use of step- composition grading and linear-composition grading are particularly effective when combined with reduced growth areas and InxGa1-xAs compositions up to x 0. 25. Blanket areas with the same composition grading techniques exhibited randomly distributed threading dislocation-free regions approximately 30 microns in diameter, which were bounded by high-density dislocation pile-ups. JS

Descriptors:

• *GROWTH(GENERAL)
• SEMICONDUCTORS
• MOLECULAR BEAMS
• CATHODOLUMINESCENCE
• ELECTRON MICROSCOPY
• TRANSMITTANCE
• CROSS SECTIONS
• EPITAXIAL GROWTH
• REDUCTION

Subject Categories:

• Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE