Accession Number:

ADA229957

Title:

Electrical Behavior on N-Type Dopants in AlGaAs Alloys: Shallow Levels and DX Centers

Descriptive Note:

Final rept. 15 Sep 1988-14 Sep 1990,

Corporate Author:

UNIVERSIDAD POLITECNICA DE MADRID (SPAIN) DEPT DE INGENIERIA ELECTRONICA

Personal Author(s):

Report Date:

1990-11-01

Pagination or Media Count:

130.0

Abstract:

The electrical properties of n-type A LxGal-xAs are governed by deep donor states, formerly called DX centers, and created by the isolated donor atoms. At very low AL compositions, such deep donors become resonant with the gamma minimum. For GaAs compositions, the electron thermal emission has been studied under hydrostatic pressure. It is suggested that deep donors show a discrete structure of energy levels, revealed in their thermal emission kinetics. An analysis of the capacitance behavior of AlGaAs n - type regions x 0.2 has been performed for Si and Sn donors. Electron capture kinetics has been modeled.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE