Fluorescent Lifetime Measurements of Rare Earth Elements in Gallium Arsenide
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING
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Lifetime measurements of the excited states of three GaAs semiconductors doped with the rare earth elements Erbium ER, Praseodymium Pr , and Thulium Tm has been studied using a pulsed nitrogen laser and germanium detector. The measurements were made with an experimental set up with a system response time of 0.34 micro seconds. A 330 milliwatt nitrogen laser with a wavelength of 3370 angstrums was used to excite transitions of the rare earth elements.
- Inorganic Chemistry
- Electrical and Electronic Equipment