Accession Number:

ADA229709

Title:

Defects and Impurities in Mercury Cadmium Telluride

Descriptive Note:

Technical rept.

Corporate Author:

XMR INC SANTA CLARA CA

Personal Author(s):

Report Date:

1988-03-01

Pagination or Media Count:

105.0

Abstract:

Over the past seven years since the initial identification of defect distributions in CdTeCdZnTe CdTe substrates and epitaxial layers of HgCdTe, improvements in both substrate near-surface quality and defect zoning in epilayers have been noted. With the development of new procedures and analytical techniques, impurity zoning in localized regions can now be identified and potential sources isolated. In addition, The deployment of scanning UV-laser cleaning procedures, developed by the authors and used since 1982 for removing particulates and residues from semiconductors, now provides the opportunity of in-situ cleaning of surfaces within the deposition chamber immediately prior to layer growth. This report provides a brief description of research conducted over the past two years on LEP, CSVPE, MOCVD, and MBE-HgCdTe layers deposited on CdTe or CdZnTe substrates including additional research on solid phase regrowth HgCdTe, THM material and substrates. tr

Subject Categories:

  • Physical Chemistry
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE