Accession Number:

ADA229659

Title:

An Examination of Radiation-Induced Bit-Upset Patterns in Semiconductor Memories

Descriptive Note:

Technical rept.

Corporate Author:

DEFENCE RESEARCH ESTABLISHMENT OTTAWA (ONTARIO)

Personal Author(s):

Report Date:

1990-05-01

Pagination or Media Count:

44.0

Abstract:

The interaction of photon radiation with semiconductor memories is well known to cause errors in the memory contents by a bit-flap process. Using a MOSAID MS2200 memory tester system, experiments were carried out to determine the number and location of these errors for two DRAMs and one SRAM exposed to LINAC and 60Co sources. The results showed that the errors are not, in general, randomly located and are highly dependent on chip architecture. This is particularly true for the DRAMs where the bits adjacent to decoder and ground lines were observed to be the first to flip. Canada. rrh

Subject Categories:

  • Electrical and Electronic Equipment
  • Test Facilities, Equipment and Methods
  • Ultraviolet Detection and Detectors
  • Nuclear Instrumentation
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE