Accession Number:

ADA229609

Title:

Interfacial and Thin Film Chemistry in Electron Device Fabrication

Descriptive Note:

Annual letter rept. 15 Sep 1989-14 Sep 1990,

Corporate Author:

COLUMBIA UNIV NEW YORK MICROELECTRONICS SCIENCE LAB

Report Date:

1990-11-20

Pagination or Media Count:

76.0

Abstract:

The fourth years progress on the Columbia URI program on Interfacial and Thin-Film Chemistry in Electron Device Fabrication is reported. Progress has been made in three broad areas MBE Growth and Devices, Laser Surface Interactions, and Fundamentals of Processing GasSurface Interactions. Examples of specific results include the first study of laser-assisted Cl2 etching of copper, many new tunnelling and optical devices in layered semiconductors a new 2-phase 2DEG-CCD seminal studies of the Si-YBaCuO system and the first observation of thin film growth by photoelectron injection. JS

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE