Impurities, Defects and Diffusion in Semiconductors: Bulk and Layered Structures. Materials Research Society Symposium Proceedings. Volume 163
Final rept. 22 Nov 1989-21 Nov 1990
MATERIALS RESEARCH SOCIETY PITTSBURGH PA
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This volume of proceedings contains manuscripts from Symposium G, entitled Impurities, Defects, and Diffusion in Semiconductors Bulk and Layered Structures. Historically, Symposium G was the seventh in a series of MRS- sponsored symposia which focused on various aspects of defects and defect properties in semiconducting materials. This symposium was conceived from the view that impurities, defects, and diffusion play key roles in modern-day research and development of semiconducting materials, structures, and devices. Recent breakthroughs in materials preparation with monolayer control, in diversity and sensitivity of characterization techniques, and in new theoretical methods, have collectively led to great advances in the understanding of defect- and impurity-related phenomena.
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