Dielectric Spectroscopy of Semiconductors
ROYAL HOLLOWAY AND BEDFORD NEW COLL EGHAM (UNITED KINGDOM)
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This Report describes the principal results of study under the US army contract on Dielectric Spectroscopy of Semiconductors DSS. Over the last three years, the following areas of study were pursued a time-domain study of the decay of open-circuit photovoltage in p-n junctions b frequency-domain characterisation of a variety of p-n junctions on high-resistivity silicon, including forward-baised junctions c frequency-domain photoconductive measurements on such p-n junctions and d a theoretical study of the significance of the time- and frequency-dependence of the response of semiconductors. The results obtained during this contract consolidate our understanding of the nature of the trapping and recombination processes which consistently show fractional power-law dependenced on time instead of the generally expected exponential dependence. The fact that the observed time dependence is fully consistent with that of delayed luminescence adds further incentive to the development of a general theoretical model for these processes and one such model is proposed.
- Electricity and Magnetism
- Solid State Physics