Accession Number:

ADA229489

Title:

Chemistry Related to Semiconductor Growth Involving Organometallics

Descriptive Note:

Corporate Author:

ARMY RESEARCH OFFICE RESEARCH TRIANGLE PARK NC

Report Date:

1990-05-11

Pagination or Media Count:

116.0

Abstract:

Workshop Summary---1 OMVPE Technology Requirements for III-V compounds Chemistry Related to Semiconductor Growth Involving Organometallics Semiconductor Device Requirements Army II-VI Deposition Program MOMBE for IR Detector Applications Epitaxial Growth of III-Vs and II-VIs Using Organometallics Electrical Device Requirements Environmental and Safety Issues in MOVPE. 2 Chemistry Related to Semiconductor Growth Involving Organometallics Quantum Chemistry of Vapor Phase Carbon Doping and Selective Epitaxy Tailoring Growth Chemistry in MOVPE. 3 TBATBP Precursors in GaAs and InP MOCVD Single Source Precursors for III-V OMCVD Growth. 4 Alternate Sources For MOMBE of AlGaAs Mechanism of Incorporation of Impurities and Analysis of Carbon Contamination. 5 Growth on Nonplanar and Patterned Substrates. 6 CBE Growth Mechanisms TriMethylamine Alane A New Robust Precursor for MOMBE Growth of AlGaAs. 7 Real-Time Determinations of OMCVD growth Kinetics on GaAs by Reflectance-Difference Spectroscopy Photoreflectance Measurements Growth and Doping Mechanisms for HgCdTe Photoassisted CBE of CdTe and HgCdTe Alloys In-situ Analysis of ZnSe Growth by OMCVD Using X-ray Scattering Biodegradation of GaAs IC Chips and Wafers Detailed Models of Compound Semiconductor Growth by MOCVD Gas Phase Probes of GaAs Cluster Chemistry Photodecomposition of Organometallic Compounds at 193 nm Manufacturing Issues in MOCVD Compound Semiconductor Technology. ttl

Subject Categories:

  • Organic Chemistry
  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE