Accession Number:

ADA229275

Title:

Physics and Technology of III-V Pseudomorphic Structures

Descriptive Note:

Interim rept. 1 Oct 1989-30 Sep 1990

Corporate Author:

CALIFORNIA UNIV SAN DIEGO LA JOLLA DEPT OF ELECTRICAL AND COMPUTER ENGINEERING

Personal Author(s):

Report Date:

1990-11-15

Pagination or Media Count:

112.0

Abstract:

AlGaAsInGaAs modulation-doped field-effect transistors with a nominally InAs2GaAs2 channel grown by migration-enhanced epitaxy exhibit better luminescent and device properties than those with a random alloy In0.4 Ga0.6As channel grown by molecular-beam epitaxy MBE. We have proposed and applied a new kinetic model, which includes both group-III alkyl and group-V species in the surface chemical reactions, to the growth of GaAs, GaSb, and InAs by metalorganic MBE or chemical-beam epitaxy CBE. We have also set up a gas- source MBE system with elemental group-III and doping sources as well as arsine and phosphine. We used the group-V-limited growth mode to determine in situ the exact values of VIII atomic ratios during growth of GaP, InP, AlP, and GaAs. X- ray studies of an InAlAsInP superlattice indicates the existence of a PAs- intermixed, strained interface.

Subject Categories:

  • Physical Chemistry
  • Crystallography
  • Particle Accelerators
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE