Workshop on MQW Mixing and its Application to Optoelectronic Devices
SURREY UNIV GUILDFORD (UNITED KINGDOM)
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Partial Contents GaInAsP-InP MQW Mixing by Zn Diffusion, Ge and S Implantation for Optoelectronic Applications, Cation Diffusion in InPIn0.53 Ga0.47As Superlattices Strain Build-Up and Relaxation, Advanced Materials Characterisation of Electronic Device Structures, Order-Disorder Ternary Alloys by Atomic Layer Epitaxy, Disordering of Superlattices for Laser Applications, Non-Destructive Characterisation of A1AsGaAs Superlattices by Optical Reflection, Disordered Delineated Waveguides in GaA1AsGaAs and GaInAsInP MQW Structures, Post Growth Tailoring of the Optical Properties of GaAs-A1GaAs Quantum Well Structures, Partial Intermixing of Strained InGaAsGaAs Quantum Wells, and Future Trends.
- Electrooptical and Optoelectronic Devices
- Solid State Physics