Accession Number:

ADA229205

Title:

Workshop on MQW Mixing and its Application to Optoelectronic Devices

Descriptive Note:

Corporate Author:

SURREY UNIV GUILDFORD (UNITED KINGDOM)

Report Date:

1990-09-01

Pagination or Media Count:

59.0

Abstract:

Partial Contents GaInAsP-InP MQW Mixing by Zn Diffusion, Ge and S Implantation for Optoelectronic Applications, Cation Diffusion in InPIn0.53 Ga0.47As Superlattices Strain Build-Up and Relaxation, Advanced Materials Characterisation of Electronic Device Structures, Order-Disorder Ternary Alloys by Atomic Layer Epitaxy, Disordering of Superlattices for Laser Applications, Non-Destructive Characterisation of A1AsGaAs Superlattices by Optical Reflection, Disordered Delineated Waveguides in GaA1AsGaAs and GaInAsInP MQW Structures, Post Growth Tailoring of the Optical Properties of GaAs-A1GaAs Quantum Well Structures, Partial Intermixing of Strained InGaAsGaAs Quantum Wells, and Future Trends.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Crystallography
  • Optics
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE