Cluster Formation and Evolution on Semiconductor and Insulator Surfaces
MINNESOTA UNIV MINNEAPOLIS DEPT OF CHEMICAL ENGINEERING AND MATERIALS SCIENCE
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The work performed under this program can be divided into three main groups. The first involved the formation of metal-semiconductor interfaces by atom deposition, with emphasis on the development of clusters on the surface, the onset of disruption, the nucleation of the metal, and the kinetics of atom redistribution in the evolving overlayer. The second involved the surface and interface properties of the high temperature superconductors. The third involved the formation of abrupt interfaces using a novel technique that we developed, namely cluster-assembly. Common to all of our studies is the need to understand the detailed chemistry of a surface as it evolves from its freshly-prepared state to its final state where an overlayer has grown over the surface. Overlayer growth is accomplished by atom deposition and cluster-assembly, and we have shown that quite different final configurations can be reached because the reaction pathways are fundamentally different.
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