An X-Ray Diffraction System for Evaluating the Epitaxial Growth of III-V Alloy Semiconductors
Final technical rept.
NORTH CAROLINA AGRICULTURAL AND TECHNICAL STATE UNIV GREENSBORO DEPT OF ELECTRICAL ENGINEERING
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The purpose ot this grant was the acquisition of an X-ray diffractometer system for use in evaluating the heteroepitaxial growth of III-V semiconductor compounds and alloys. The diffraction data permit a determination of the lattice constant mismatch between the single crystal substrate and the epilayer. Keywords Semiconductors, X-Ray diffraction, Epitaxial growth.
- Atomic and Molecular Physics and Spectroscopy
- Nuclear Physics and Elementary Particle Physics