Accession Number:

ADA224904

Title:

An X-Ray Diffraction System for Evaluating the Epitaxial Growth of III-V Alloy Semiconductors

Descriptive Note:

Final technical rept.

Corporate Author:

NORTH CAROLINA AGRICULTURAL AND TECHNICAL STATE UNIV GREENSBORO DEPT OF ELECTRICAL ENGINEERING

Personal Author(s):

Report Date:

1984-09-30

Pagination or Media Count:

4.0

Abstract:

The purpose ot this grant was the acquisition of an X-ray diffractometer system for use in evaluating the heteroepitaxial growth of III-V semiconductor compounds and alloys. The diffraction data permit a determination of the lattice constant mismatch between the single crystal substrate and the epilayer. Keywords Semiconductors, X-Ray diffraction, Epitaxial growth.

Subject Categories:

  • Atomic and Molecular Physics and Spectroscopy
  • Nuclear Physics and Elementary Particle Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE