Accession Number:

ADA224828

Title:

Ellipsometry Studies of Oxides

Descriptive Note:

Quarterly rept. no. 3

Corporate Author:

ILLINOIS UNIV CHAMPAIGN

Personal Author(s):

Report Date:

1983-01-01

Pagination or Media Count:

3.0

Abstract:

the work has been devoted to ellipsometry studies of oxides deposited by anodization. Typical results are summarized in the attached table. It is possible to measure the surface roughness at the interface between the oxide and the semiconductor, the fraction of oxide in relation to semiconductor in the rough layer, as well as the thickness of the oxide. It should be noted that the accuracy of this determination is far greater and more dependable than the accuracy of the determination of the oxide thickness made by single wavelengths ellipsometer. The reason is that no assumptions are made here as to the optical properties of the oxide or of the semiconducting substrate since both can be measured separately. The results show also that it is possible to study the effects of different chemical attacks on the surface. An examples of the study of the surface after removal of the oxide is given for illustration. One sees that a lactic acid dissolution of a 256A thick oxide layer leaves behind a 9A thick layer of native oxide coating the original interface layer of which the thickness is almost unchanged 12A compared to 15A.

Subject Categories:

  • Physical Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE