Accession Number:

ADA224827

Title:

MOCVD Comparison by EER

Descriptive Note:

Quarterly progress rept. no. 2, Part 2 Jul-Sep 1983

Corporate Author:

ILLINOIS UNIV CHAMPAIGN

Personal Author(s):

Report Date:

1983-01-01

Pagination or Media Count:

39.0

Abstract:

Included are results X, gamma and theta vs. depth from EER analysis. Graphic figures of gamma and theta vs. depth have been added to the R. S.R.E. report to permit one-to-one comparison of the results. Summary 1 Both epilayers appear graded throughout with an interface region of 1.5 to 2 microns. 2 Both appear p-type theta approximately pi with the R.S.R.E. being well defined and the NVL sample lapsing to n-type regions during the depth profile. 3 Both exhibit law defect density gamma 100meV rapidly increasing at the interface. Conclusions 1 Insufficient control of growth parameters. 2 In view of widely varying composition the invariance of the carrier concentration provides an important clue. It implies a high impurities content and strong compensation rendering the carrier concentration essentially independent from composition. 3 This result shows that the relatively low mobility of these materials in probably due to impurities scattering and not to defect scattering.

Subject Categories:

  • Crystallography

Distribution Statement:

APPROVED FOR PUBLIC RELEASE