Accession Number:

ADA224762

Title:

Ultrafast Physics in Microstructure and Alloy Systems

Descriptive Note:

Final rept. 1 Dec 1985-30 Nov 1989

Corporate Author:

CITY COLL NEW YORK DEPT OF PHYSICS

Personal Author(s):

Report Date:

1990-06-29

Pagination or Media Count:

13.0

Abstract:

This technical report summarizes the physics underlying ultrafast transient phenomena that occur in the semiconductor microstructures. 1 Nonequilibrium phonon effects on the energy relaxation and lifetime of photogenerated carriers in GaAs MQW 2 Dependence of electron temperature on well width in AIInAsGaInAs single quantum well 3 Determination of band offsets in semiconductor heterolayer via optical transitions in ultrathin quantum wells 4 Photogenerated of high-density electron-hole plasma energy relaxation and rapid expansion in CdSe 5 Ultrafast photoluminescence kinetics from the magnetic semiconductor CdCrSe excited by femtosecond laser pulse 6 Physics in semiconductor GaAs and GaSe under picosecond laser-driven shock-wave compression 7 Optical transition and recombination lifetime in quasi-zero dimensional electron system in CdSxSe1-x 8 Picosecond dynamics of exciton dissociation by neutral carbon acceptors in GaAs quantum wells 9 Determination of I-X mixing effects on the escape time of electrons in resonant state of GaAsAlGaAs double-barrier tunneling structures 10 Determination of intervalley X sub 6 - Gamma sub 6 scattering time in GaAs by picosecond pump- probe infrared absorption spectroscopy 11 Determination of the effective mass and energy minimum of the X7 satellite conduction band of GaAs 12 Gamma-L intervalley scattering rates in GaAs measured by femtosecond time-resolved four- wave mixing spectroscopy 13 Hole dynamics in GaAs epilayer grown on Si substrate 14 Electron dynamics in GaAs multiple quantum wells on Si.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE