Accession Number:
ADA224686
Title:
A Monolithic Dual-Gate MESFET Circuit for L-Band Mixers
Descriptive Note:
Master's thesis
Corporate Author:
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH
Personal Author(s):
Report Date:
1990-06-01
Pagination or Media Count:
119.0
Abstract:
An L-band GaAs dual-gate MESFET monolithic mixer has been developed to convert a 1.575 GHz signal to an intermediate frequency of 173 MHz with a local oscillator frequency of 1.402 GHz. In order to reduce chip size, active baluns and buffer amplifiers have been combined with two dual-gate MESFET mixers to form a single integrated balanced mixer circuit. The active baluns eliminate the need for large passive baluns, and the buffer amplifiers replace the IF matching networks thus, easing integration at L-band frequencies. Circuit size is 1.15 X 1.8 mm. The circuit was commercially fabricated however, this thesis describes only the design, simulation, and layout of the mixer circuit.
Descriptors:
- *FIELD EFFECT TRANSISTORS
- *MIXERS(ELECTRONICS)
- *INTEGRATED CIRCUITS
- SIZES(DIMENSIONS)
- GALLIUM ARSENIDES
- PASSIVE SYSTEMS
- THESES
- GATES(CIRCUITS)
- CHIPS(ELECTRONICS)
- INTEGRATION
- MONOLITHIC STRUCTURES(ELECTRONICS)
- FREQUENCY CONVERSION
- DUAL CHANNEL
- AMPLIFIERS
- LOCAL OSCILLATORS
- COUPLING CIRCUITS
- L BAND
- SIMULATION
- ANTENNA COMPONENTS
- FREQUENCY
- BUFFERS
Subject Categories:
- Electrical and Electronic Equipment