Accession Number:

ADA224686

Title:

A Monolithic Dual-Gate MESFET Circuit for L-Band Mixers

Descriptive Note:

Master's thesis

Corporate Author:

AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH

Personal Author(s):

Report Date:

1990-06-01

Pagination or Media Count:

119.0

Abstract:

An L-band GaAs dual-gate MESFET monolithic mixer has been developed to convert a 1.575 GHz signal to an intermediate frequency of 173 MHz with a local oscillator frequency of 1.402 GHz. In order to reduce chip size, active baluns and buffer amplifiers have been combined with two dual-gate MESFET mixers to form a single integrated balanced mixer circuit. The active baluns eliminate the need for large passive baluns, and the buffer amplifiers replace the IF matching networks thus, easing integration at L-band frequencies. Circuit size is 1.15 X 1.8 mm. The circuit was commercially fabricated however, this thesis describes only the design, simulation, and layout of the mixer circuit.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE