Accession Number:

ADA224619

Title:

Carrier Collection and Scattering in Quantum Well and Superlattice Devices

Descriptive Note:

Final rept. 1 Apr 1987-30 Apr 1990

Corporate Author:

NORTH CAROLINA STATE UNIV AT RALEIGH

Personal Author(s):

Report Date:

1990-06-30

Pagination or Media Count:

7.0

Abstract:

Significant progress has been made in understanding carrier collection and stimulated emission in ultra-thin semiconductor quantum wells. Continuous wave low threshold laser operation has been demonstrated with quantum wells as thin as one monolayer 3.5A. A more complete theory of the scattering and collection of carriers near a quantum well has been proposed and shown to be quantitatively consistent with previous experiments and the unexpected experimental results monolayer lasers demonstrated in this program. We have shown that the spatial extent of the wave function rather than the well width is the more fundamental length parameter when considering the collection of carriers by a quantum well. The first time resolved data on phonon assisted stimulated emission was demonstrated. The data is consistent with Holonyaks prediction of stimulated phonon emission. This could open up an entirely new class of electron-phonon-photon interactions in condensed matter. Other important results include the first demonstration of laser action on a staggered real space transition first tunneling through a bound state in a strained layer resonant tunneling device and the demonstration that ultra-thin quantum wells can be preserved at elevated temperatures with a Ga overpressure. Keywords Heterojunctions, Quantum wells, Lasers, Semiconductors, Optoelectronics, Phonons, Wave function, Tunneling.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE