Semiconductor Engineering for High-Speed Devices
Quarterly Status rept. no. 4, 15 Mar-13 Jun 1986
SRI INTERNATIONAL MENLO PARK CA
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This report summarizes major accomplishments covering the period 15 March to 13 June. A paper entitled Velocity Field Characteristics of III-V semiconductor Alloys, which was submitted to the Journal of Applied Physics is attached as Appendix A. Our aim in this period has been to expand the work to study the effect of ionized impurity scattering and strain scattering on the electron mobility. The modified electron mobility will, in turn, affect velocity-field v-E characteristics in semiconductors and their alloys. Ionized impurity scattering is treated in a second order perturbation theory. Our improvement over previous theories is to convert the usual integration over a parabolic energy band to a general Brillioun Zone BZ integration. This conversion allows us to incorporate the effect of realistic band structures into this transport calculation.
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