Microscopic Aspects of the Initial Stages of Epitaxial Growth. A scanning Tunneling Microscopy Study
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Scanning tunneling microscopy offers the opportunity to investigate growth and ordering processes at the atomic level and hence to identify and distinguish different kinetic and energetic mechanisms that may be operative. A review of the fundamental mechanisms of growth is given. Scanning tunneling microscopy measurements of the ordering and growth of Si on 001 are used to illustrate these mechanisms. Diffusion coefficients, growth anisotropy and lateral accommodation coefficients, equilibrium island shapes and free energies, edge desorption energies, and diffusional anisotropy are discussed. Keywords Surfaces Kinetics Ordering Growth STM Diffusion.
- Physical Chemistry