Accession Number:

ADA224324

Title:

Kinetic Pathway in Stranski-Krastanov Growth of Ge on Si(001)

Descriptive Note:

Technical rept.

Corporate Author:

WISCONSIN UNIV-MADISON

Report Date:

1990-04-20

Pagination or Media Count:

18.0

Abstract:

The transition from 2D to 3D growth of Ge on Si001 has been investigated with scanning tunneling microscopy. A metastable 3D cluster phase with well-defined structure and shape is found. The clusters have Ge lattice constants and a 105 facet structure. Results suggest that these clusters provide an easy kinetic path for formation of macroscopic Ge islands. Keywords Surfaces Kinetics Ordering Growth Germanium Silicon.

Subject Categories:

  • Physical Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE