Accession Number:

ADA224324

Title:

Kinetic Pathway in Stranski-Krastanov Growth of Ge on Si(001)

Descriptive Note:

Technical rept.

Corporate Author:

WISCONSIN UNIV-MADISON

Personal Author(s):

• Mo, Y. W.
• Savage, D. E.
• Swartzentruber, B. S.
• Lagally, M. G.

Report Date:

1990-04-20

Pagination or Media Count:

18.0

Abstract:

The transition from 2D to 3D growth of Ge on Si001 has been investigated with scanning tunneling microscopy. A metastable 3D cluster phase with well-defined structure and shape is found. The clusters have Ge lattice constants and a 105 facet structure. Results suggest that these clusters provide an easy kinetic path for formation of macroscopic Ge islands. Keywords Surfaces Kinetics Ordering Growth Germanium Silicon.

Descriptors:

• *TUNNELING
• PATHS
• MICROSCOPY
• GERMANIUM
• KINETICS
• SCANNING
• SILICON

Subject Categories:

• Physical Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE