Kinetic Pathway in Stranski-Krastanov Growth of Ge on Si(001)
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The transition from 2D to 3D growth of Ge on Si001 has been investigated with scanning tunneling microscopy. A metastable 3D cluster phase with well-defined structure and shape is found. The clusters have Ge lattice constants and a 105 facet structure. Results suggest that these clusters provide an easy kinetic path for formation of macroscopic Ge islands. Keywords Surfaces Kinetics Ordering Growth Germanium Silicon.
- Physical Chemistry