Accession Number:

ADA224319

Title:

Theory of Electronic States and Formation Energies of defect Complexes, Interestitial Defects And Crystal Growth in Semiconductors

Descriptive Note:

Rept for Aug 1987-Oct 1988

Corporate Author:

ARIZONA STATE UNIV TEMPE

Personal Author(s):

Report Date:

1988-10-01

Pagination or Media Count:

13.0

Abstract:

During this period, three main areas of our research were focused on. The first is the prediction of deep levels and equilibrium concentrations of defects in semiconductors, second is the mathematical development of an ab- initio tight binding theory for quantum molecular dynamics calculations, and finally the third area was a pseudo-atomic-orbital band theory applied to electron energy loss near edge structures. The project on defects and their equilibrium concentration has been an area of active research for the last couple of years. We have now successfully completed calculations on GaAs, ZnSe, ZnTe and GaP. The purpose of this work was to determine the dominant native defects in these materials, and to investigate trends.

Subject Categories:

  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE