Theory of Electronic States and Formation Energies of defect Complexes, Interestitial Defects And Crystal Growth in Semiconductors
Rept for Aug 1987-Oct 1988
ARIZONA STATE UNIV TEMPE
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During this period, three main areas of our research were focused on. The first is the prediction of deep levels and equilibrium concentrations of defects in semiconductors, second is the mathematical development of an ab- initio tight binding theory for quantum molecular dynamics calculations, and finally the third area was a pseudo-atomic-orbital band theory applied to electron energy loss near edge structures. The project on defects and their equilibrium concentration has been an area of active research for the last couple of years. We have now successfully completed calculations on GaAs, ZnSe, ZnTe and GaP. The purpose of this work was to determine the dominant native defects in these materials, and to investigate trends.
- Lasers and Masers