Research on Mercury Cadmium Telluride
Final rept. 15 Feb 1985-14 Feb 1990
RENSSELAER POLYTECHNIC INST TROY NY DEPT OF ELECTRICAL COMPUTER AND SYSTEMS ENGINEERING
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This report summarizes work done over a five-year period on a program entitled, Research on Mercury Cadmium Telluride. Using the alloy growth OMVPE process, we have obtained compositional uniformity of 0.005 over a 2 GaAs slice. p-type doping to 10 17cm3 and n-type doping to 4 x 10 18cm3 have been achieved using As and In respectively. Annealing studies have shown that the background concentration of undoped HgCdTe is around 5 x 10 14cm3. Passivation techniques, using anodic sulfidization, have been developed for HgCdTe. Both p-n diodes and field effect transistors have been demonstrated on material grown during the course of this program. A diffusion length of 120 microns has been measured in material with x 0.3.
- Metallurgy and Metallography