Accession Number:

ADA224120

Title:

III-V Semiconductor Quantum Well Lasers and Related Optoelectronic Devices on Silicon (Abstracts)

Descriptive Note:

Technical rept.

Corporate Author:

ILLINOIS UNIV AT URBANA-CHAMAPAIGN

Report Date:

1990-06-01

Pagination or Media Count:

30.0

Abstract:

For some time interests have been aroused by the III-V quantum well heterostructures QWHs and superlattices SLs and, in addition to fundamental effects, the special opportunities QWHs and SLs afford in making possible improved forms of lasers, not to mention other devices and optoelectronic systems. In this report, studies have been made of 1 AlxGa1-xAs-GaAs lasers on Si, 2 impurity induced layer disordering which is an especially advantageous phenomenon in QWHs and SLs, 3 phonon-assisted laser operation and its unambiguous identification by control of the cavity Q of QWH samples, 4 the use of cavity Q to fill the recombination spectrum of QWHs, and 5 hydrolization and reliability of AlxGa1-xAs-GaAs QWHs and SLs, and 6 various other laser problems associated with higher gap crystals such as Iny AlxGa1-x1-yP. Keywords Lasers Silicon Semiconductors.

Subject Categories:

  • Inorganic Chemistry
  • Lasers and Masers

Distribution Statement:

APPROVED FOR PUBLIC RELEASE