Defects Associated with the Incorporation of Germanium in Gallium Arsenide
AIR FORCE INST OF TECH WRIGHT-PATTERSON AFB OH SCHOOL OF ENGINEERING
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Above and below bandgap excitation studies were performed on Gallium Arsenide samples implanted with Germanium to assess the nature of impurities and defects associated with the incorporation of this element. In addition, dual implanted GaAs samples GeGa and GeAs were also investigated to further facilitate the characterization and identification of probable stoichiometric defects. The luminescence results are presented for samples implanted with various doses of ions spanning 1E13-1E15 1centimeters squared at an energy of 120 kilo electron volts, and annealed for 15 minutes at a temperature of 900 deg C. Keywords Theses, Gallium arsenide, Compound semiconductor devices, Optoelectronic devices, Bandgap excitation studies, Doping, Defects, High temperature, Stoichiometric defects, Vacancies, Interstitials, Antisites.
- Inorganic Chemistry
- Atomic and Molecular Physics and Spectroscopy