International Workshop on Hydrogen Passivation of Dopants and Defects in III-V Compounds and Their Alloys
HARWELL LABS (UNITED KINGDOM)
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This Workshop is intended as a small meeting of people active in the field of the interaction of hydrogen with dopants and defects in III-V compounds and their alloys. The main subjects debated in this workshop will be The practical use of hydrogenation, either by plasma introduction or by proton implantation in the fabrication of III-V devices. The study by electrical and optical methods of the neutralization by hydrogen of dopants in III-V compounds. The correlation between the distribution of hydrogen, its charge state and the dopant neutralization. The presentation of channeling measurements which give a good insight of the atomic location of hydrogen in the crystal lattice is a natural transition to the calculation of microscopic models of the hydrogen complexes, first performed for hydrogen in pure and doped silicon and more recently in doped gallium arsenide.
- Electricity and Magnetism