Rapid Annealing of Iron Implanted Hg(1-x)Cd(x)Te
Final technical rept. 1 Oct 1986-28 Feb 1990
TECHNION RESEARCH AND DEVELOPMENT FOUNDATION LTD HAIFA (ISRAEL)
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Different Rapid Thermal Annealing techniques have been employed to achieve damage removal and electrical activation of dopants in ion implanted Hg1-xCdxTe x 0.2, 0.3. As seen by Rutherford Backscattering Spectrometry combined with channeling and Auger measurements annealings with a CO2 laser or a flash lamp lead to good removal of implantation damage without causing changes in the stoichiometry. These techniques, however, suffer from complexity and lack of reproducibility. The new simple method for RTA of mercury containing crystals Annealing by immersion in a how MErcury BAth AMEBA which we have developed within the present project was found to be comparable to other more complicate techniques as for improving the electrical properties of HgCdTe as deduced from Hall and differential Hall measurements. Keywords Hg1-xCdxTe, Ion implantation, Damage annealing, Stoichiometry, Electrical properties.
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