Role of Surface Passivation in the Integrated Processing of MOS structures
IBM THOMAS J WATSON RESEARCH CENTER YORKTOWN HEIGHTS NY
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In order to achieve low defect densities and process simplification, future ULSI manufacturing is expected to incorporate multichamber integrated vacuum processing equipment. This raises opportunities for new levels of contamination control, including microscopic reactive impurities as well as particles, but also introduces new questions about how to successfully integrate process steps such as preoxidation cleaning with thermal oxidation. In this paper we describe electrical properties of simple MOS capacitors prepared in a multichamber integrated ultrahigh vacuum UHV processing system with in-situ analysis capabilities. This system has allowed us to integrate the surface preclean steps with the thermal oxidation process without air exposure between the two. In-situ surface analysis has permitted characterization of the precleaned surface, particularly the concentration of oxide and carbon present after different precleaning treatments.
- Electrical and Electronic Equipment