Accession Number:

ADA222538

Title:

Design and Fabrication of High Speed Cards for the Transient Annealing Test System (TATS)

Descriptive Note:

Corporate Author:

DESIGN ENGINEERING INC ALBUQUERQUE NM

Personal Author(s):

Report Date:

1990-05-01

Pagination or Media Count:

20.0

Abstract:

The manner in which the IV curves change during and after irradiation is a complex function of many factors, most of which have some type of very fast andor logarithmic behavior with time. For example, in CMOSSOS technologies as well as bulk CMOS technologies with planar hardened field oxides no guardbands, a leakage path under the field oxide, around the end of the gate, may result in IC failure after a short pulse, high dose exposure. As the charge trapped in the field oxide anneals with time, the leakage current will decrease and finally disappear. The Transient Annealing Test System TATS was developed to study the time varying IV characteristics of MOSFET and BIPOLAR transistors following exposure to radiation so that phenomena such as the described above could be investigated. The TATS is a modular system that accepts up to eight plug-in card sets, each set being essentially an independent test system.

Subject Categories:

  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE