Accession Number:

ADA222083

Title:

Ni Impurity Effects on Hydrogen Surface Chemistry and Etching of Si(111)

Descriptive Note:

Technical rept.

Corporate Author:

PITTSBURGH UNIV PA SURFACE SCIENCE CENTER

Report Date:

1990-05-21

Pagination or Media Count:

20.0

Abstract:

The effect of impurity Nickel on the etching of Silicon by hydrogen chemisorption is examined in ultrahigh vacuum with Auger electron spectroscopy and temperature programmed desorption methods. It is found that a small surface concentration of Ni inhibits the production of Silane from atomic Hydrogen adsorption on the Si111-Ni surface. Keywords Silane, Hydrogen, SiH4, si111, Ni, Physical chemistry, Impurities, Metal films, AES.

Subject Categories:

  • Physical Chemistry

Distribution Statement:

APPROVED FOR PUBLIC RELEASE