Accession Number:

ADA220946

Title:

Studies of Chemistry and Diffusion on Silicon and Gallium Arsenide Surfaces Using Laser-Induced Thermal Desorption

Descriptive Note:

Final rept.

Corporate Author:

STANFORD UNIV CA DEPT OF CHEMISTRY

Personal Author(s):

Report Date:

1990-01-01

Pagination or Media Count:

26.0

Abstract:

Surface chemistry and surface diffusion play pivotal roles in semiconductor processing and must be understood as electronic device dimensions approach the submicron level. In this project, basic time-dependent processes on silicon surfaces were examined using laser induced thermal desorption LITD and Fourier transform infrared FTIR spectroscopy. These techniques provided direct, quantitative measurements of surface coverage in real-time. Using LITD and FTIR techniques, emphasis was on a microscopic understanding of semiconductor surface reaction kinetics.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE