Accession Number:

ADA220236

Title:

Research on Development of Low-Resistance p-n Junctions in ZnSe

Descriptive Note:

Progress rept.

Corporate Author:

PHILIPS LABS BRIARCLIFF MANOR NY

Personal Author(s):

Report Date:

1981-03-01

Pagination or Media Count:

2.0

Abstract:

Several groups of wafers were implanted with nitrogen at the Naval Research Laboratory H. Dietrich and at the University of California,Santa Barbara J. Merz. An n-type VPE wafer implanted at NRL with a dose of 3 x 10 to the 14th power ionssq cm showed a p-type resistivity of approximately 2 x 10 to the 6th power ohm-cm after a 600 C30 min anneal in nitrogen. This value is, of course, still very high, but preliminary measurements of the activation energy of the conductivity showed that an acceptor level about 0.7 eV deep was interfering with the conductivity the strong negative effect of deep levels on conductivity has been recently calculated in this laboratory. This level may be due to some impurity or residual damage from the implantation. Higher temperature anneals are being tried in order to remove more of the implantation damage. The wafers implanted at UCSB and annealed at 800 C did show the photo- luminescence properties associated with nitrogen.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE