Accession Number:

ADA219860

Title:

Electrical Transport Through Tunnel Barriers and Thin Dielectric Layers and Physical Properties of the High Tc Oxide Superconductors

Descriptive Note:

Final rept. 1 Apr 1983-30 Sep 1989

Corporate Author:

STANFORD UNIV CA EDWARD L GINZTON LAB OF PHYSICS

Personal Author(s):

Report Date:

1990-03-26

Pagination or Media Count:

23.0

Abstract:

A broad research program was carried out aimed at the study of advanced superconducting electronic materials, superconducting tunnel junctions and the tunneling process itself. An artificially deposited amorphous silicon tunnel barrier was developed and applied 1 to tunneling studies of the A15 class superconductors Niobium tin and Vanadium gallium, and 2 to studies of the role of localized states on the tunneling process. The first practical sandwich-type superconductingnormalsuperconducting Josephson junction device was developed based on a Nb-alloyed amorphous silicon barrier materials near a metalinsulator transition. The device appears to be an attractive alternative to shunted tunnel junctions for many applications. Finally, the first practical approach to the deposition of the new high-temperature oxide superconductors was developed-the so-called post-annealed approach-and the materials science of resulting films studied in detail. Tunneling studies of the high-temperature oxide superconductors were also carried out and provided the first evidence for the very large superconductive energy gaps now commonly reported for these materials.

Subject Categories:

  • Electricity and Magnetism

Distribution Statement:

APPROVED FOR PUBLIC RELEASE