Accession Number:

ADA218998

Title:

Burnout Thresholds and Cross Section of Power MOS Transistors with Heavy Ions

Descriptive Note:

Technical rept. 1 May 1986-30 Apr 1988

Corporate Author:

ROCKWELL INTERNATIONAL ANAHEIM CA

Personal Author(s):

Report Date:

1990-02-01

Pagination or Media Count:

109.0

Abstract:

Power MOSFET heavy ion-induced Single Event Burnout tests were performed jointly by representatives of the Aerospace Corporation, NASA Goddard, NWSC Crane and Rockwell International. For the most part, presented are the results of the burnout threshold and cross section characterizations performed on n-channel power MOSFETs, however a small amount of p-channel data is also included. In addition, data on the effect of temperature, gate bias, total dose and inductive loading on MOSFET Single Event Burnout sensitivity is preferred. At the time of the test effort, radiation hardened devices were being developed by International Rectifier and RCAGE. The heavy-ion-induced burnout test results on available samples of these devices are also incorporated for comparison to the commercial and JEDEC versions tested.

Subject Categories:

  • Electrical and Electronic Equipment
  • Solid State Physics

Distribution Statement:

APPROVED FOR PUBLIC RELEASE