Accession Number:

ADA218816

Title:

Negative Electron Affinity for Infrared Detection

Descriptive Note:

Final rept. 1 Jul 1986-30 Sep 1989

Corporate Author:

UNIVERSITY OF SOUTHERN CALIFORNIA LOS ANGELES

Personal Author(s):

Report Date:

1989-09-30

Pagination or Media Count:

28.0

Abstract:

This study extensively examined the optical properties of gallium phosphide GaP, and concentrated upon the optical bistability of GaP device and a gallium phosphide infrared detector based on linear upconversion. To detect upconverted infrared signal the photoconducting scheme was tried. In this case the noise current by the pumping beam and imperfect surface state is too dominant to see the signal since the probe is directly contacted on the sample. The indication of infrared signal could be observed, but it is too weak to estimate the quantum efficiency. The sample surface defects and edge adsorption due to high impurity concentration are to be the reasons. Although the surface defects due to dangling bond and the band tailing effect are probably inherent in the system, it can be minimized by precise selection of the pump beam frequency.

Subject Categories:

  • Electrooptical and Optoelectronic Devices
  • Infrared Detection and Detectors

Distribution Statement:

APPROVED FOR PUBLIC RELEASE