Accession Number:

ADA218774

Title:

Microelectronic Device Reliability

Descriptive Note:

Final rept. Aug 1986-Aug 1989

Corporate Author:

CLEMSON UNIV SC

Personal Author(s):

Report Date:

1990-01-15

Pagination or Media Count:

6.0

Abstract:

Research on pulsed current electromigration in fine-line VLSI metallization was performed. A test structure containing 6 sample lines was designed in accordance with NBS recommendations Ca. 1987 fabricated by an industrial firm and supplied to Clemson University for continued electromigration research.

Subject Categories:

  • Electrical and Electronic Equipment

Distribution Statement:

APPROVED FOR PUBLIC RELEASE